Stress control and dislocation reduction in the initial growth of GaN on Si (111) substrates by using a thin GaN transition layer

Kun Wang, Zhijian Yang + Show 3 more

https://doi.org/10.1039/c9ce00744j

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Journal: CrystEngComm	Publication Date: Jan 1, 2019
Citations: 14

Abstract

A thin GaN transition layer technology is proposed to control stress and reduce the dislocation density in the initial GaN growth.

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