Stress and pressure effects on a Si/SiGe double-barrier structure studied by magnetotunnelling spectroscopy

Abstract

Si/SiGe double-barrier resonant tunnelling structures have been studied using magnetotunnelling spectroscopy while applying either uniaxial stress or hydrostatic pressure. The stress dependence of some of the observed resonances indicate that the d I/d V– V characteristics cannot simply be explained by tunnelling of the emitter heavy-holes through heavy-hole or light-hole quantum well subbands at different points in k-space. Instead, scattering in the light-hole-like barrier seems to be of importance.