Abstract
The stress states in AlN nanorods deposited on Si and its effect on optical properties have been investigated by means of Raman scattering and photoluminescence methods. The observed frequency downshift and linewidth broadening from temperature-dependent Raman scattering can be well described by an empirical relationship taking into account the contributions of the thermal expansion and decay of optical phonons. The phonon-energy difference of the E2(high) mode between the stress-free bulk-AlN and AlN nanorods appears to increase with increasing temperature, demonstrating that differential thermal expansion between the Si-substrate and AlN nanorods is the key parameter reflecting the stress in the nanorods.
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