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Abstract
The successful application of strained-layers based heterostructures for electronic and optoelectronic devices depends on a better understanding of strain-induced structural defects that lead to the deterioration of the materials’ electronic properties. We have previously reported the successful growth of strain compensated InP/GaAs/GaP/GaAs structures by chemical beam epitaxy. In this paper, we use similar structures grown on off-cut (001) GaAs substrates to investigate the dynamics of structural defects creation and propagation. Our results from high resolution X-ray diffraction (HRXRD), conventional and high resolution transmission electron microscopy (TEM and HRTEM) as well as cathodoluminescence (CL) techniques from samples grown on 2, 4, 6, 10, 12 and 14° (111)A misoriented GaAs (001) substrates are presented. The effect of post-growth thermal treatment on these strain balanced superlattices are also discussed.
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