Abstract
The room temperature strength of sintered silicon carbide (SSC), reaction bonded silicon carbide (RBSC) and a SiC-7·5% vol. TiB 2 composite, in the ground condition, and after oxidation in air in the ground condition and with deposits of Na 2SO 4 or NaCl, has been determined. The strength of the ground SSC, RBSC and SiCTiB 2 were similar. The strength of all the materials was increased slightly by oxidation in air. Oxidation with salt deposits reduced the strength. For Na 2SO 4 deposits, after oxidation at 1000°C for 70 h, the strenghts of SSC, RBSC, and SiCTiB 2 were reduced by factors of 0·74, 0·76, and 0·64 respectively, and the glass reaction product formed large corrosion pits in the surface.
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