Abstract
Changes in photoluminescence (PL) originating from non-bridging oxygen hole centers (NBOHCs) are investigated by applying tensile stress up to 4GPa to silica optical fibers. The formation of NBOHCs, that is, SiO bond breakage, is related to the formation of valence alternative (VA) defects in silica glass. The PL intensity increases with increasing applied stress and almost reverts to the initial state on release of the stress. The concentration of NBOHCs induced by a stress of 4 GPa is, however, very low (about 10 14 spin/g). Thus, it is found the first time that applied stress causes the SiO bond breakage, which is the first step for the formation of VA defects. Moreover, the reversible change in PL intensity indicates that dangling bonds cannot be converted easily to VA defects in silica glass.
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