Abstract

Abstract A new class of non-dispersive Si nanoparticle (SNP) system has been created on Si(1 0 0) wafers by low-energy oxygen co-implantation during Si MBE. Ordered, highly oriented Si nanoparticles embedded in SiO2 with dimensions d = 4–100 nm are observed. Transmission electron microscopy shows that SNPs are oriented preferentially to [1 0 0], indicative of epitaxial growth of SNP as compared to conventional dispersive SNPs. Individual SNP is confirmed to be a single crystal and exhibits unusual habits with (1 0 0) and (1 1 1) facets. Broad visible luminescence bands are observed at room temperature.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call