Strategic Study on the Development of Advanced Semiconductor Materials and Auxiliary Materials in China

Abstract

The rapid development of the third-generation semiconductor materials represented by SiC and GaN offers China a strategic opportunity to realize the independent control over its advanced semiconductor materials and auxiliary materials sector and to ensure the security of relevant industrial systems. In this paper, we analyze the development status of semiconductor materials and auxiliary materials in China and abroad, propose the idea of systematic, upstream–downstream coordinated, and sustainable development, and set the development goals for these materials by 2025 and 2035. To promote the development of advanced semiconductor materials and auxiliary materials in China, we suggest the establishment of a project for realizing independent control over key material and equipment of integrated circuit; a platform that provides integrated tests for SiC and GaN semiconductor materials, auxiliary materials, processes, and equipment; and application demonstration projects for advanced semiconductor materials in the fifth-generation mobile communication, energy internet, and new energy vehicle fields. Demand analysis regarding these projects is conducted and specific project objectives and tasks are proposed correspondingly. To promote the innovative development of the semiconductor industry, China should adhere to government guidance to facilitate the integration of domestic advantageous resources, grasp the “More Than Moore” opportunity of to lay out the next-generation integrated circuit technologies, and construct an innovation chain to further improve the innovation ecology.