Abstract
AbstractMultiple‐layer stacked GaN quantum dots (QDs) with intense photoluminescence (PL) have been grown by the Stranski–Krastanow growth mode in metalorganic chemical vapor deposition. Scanning transmission electron microscopy (STEM) analysis shows that the vertical aligned QDs are formed, which results from a strain field induced by buried islands. We have also investigated PL spectra at room temperature. The PL intensity increases with increasing number of the stacked layer. This indicates that the carriers can be injected into each layer of GaN quantum dots. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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