Abstract
Abstract Thin layers of InSb, GaSb and AlSb were grown on GaAs(0 0 1) by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. All three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of (In,Ga,Al)Sb. The wetting layers consist of anisotropic, ribbon-like structures oriented along the [1 1 0] direction, with characteristic separations of 40–50 A. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
