Abstract
Abstract Thin layers of InSb, GaSb and AlSb were grown on GaAs(0 0 1) by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. All three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of (In,Ga,Al)Sb. The wetting layers consist of anisotropic, ribbon-like structures oriented along the [1 1 0] direction, with characteristic separations of 40–50 A. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.
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