Abstract
Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.
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