Abstract

The development of magnetic materials with large magnetic anisotropy energy (MAE) is crucial for magnetic storage and spintronics applications. The electronic structure and magnetic properties of 1T-FeSe2 monolayer have been systematically investigated by first-principles computational methods. The monolayer 1T-FeSe2 is confirmed to be a ferromagnetic semimetal with 100% spin polarization and exhibits pronounced magnetic anisotropy. It shows an easy magnetization plane in the two-dimensional plane and its MAE is as high as 8.134 meV. The MAE mainly originates from the contributions of transitions between Fe dyz and dz2, dxy and dx2−y2 orbitals, while the contributions of transitions between p x and p y, p x and p z orbitals of Se are also obvious. The biaxial strain significantly regulates the magnetic properties and electronic structures of the 1T-FeSe2 monolayer. Interestingly, the MAE increases significantly to 77.680 meV when the tensile strain increases to 3.5%, we can expect to achieve a reasonable value of MAE up to 98.951 meV by applying 5% tensile strain. In addition, the easy magnetization plane changes to perpendicular easy magnetization axis direction at −6% compressive strain or 7% tensile strain, which leads to a significant change in the band structure near the Fermi level. The 100% spin-polarized ferromagnetic semi-metallic behavior and the huge strain-induced magnetic anisotropy make the 1T-FeSe2 monolayer material promising for spintronics and magnetic data storage.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.