Abstract
We investigate the band structure of narrow armchair-edge graphene nanoribbons (AGNRs) under tensile strain by means of an extension of the Extended Hückel method. The strain-induced band gap modulation presents asymmetric behavior. The asymmetric modulation of band gap is derived from the different changes of conduction and valence bands near Fermi level under tensile strain. Further analysis suggests that the asymmetric variation of band structure near Fermi level only appear in narrow armchair-edge graphene nanoribbons.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
