Strain-Free GexSi1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

Abstract

ABSTRACTWe have grown linearly compositionally graded GexSi1−x structures at high temperatures (700–900°C) on Si substrates to form a surface which resembles a GexSi1−x substrate. We have obtained completely relaxed structures with x≤0.50 and threading dislocation densities in the 105cm−2 - 106cm−2 range. Because of the very low threading dislocation densities, the structures appear dislocation free in conventional transmission electron microscopy (TEM) cross-section and plan view. Employing the electron beam induced current technique (EBIC), we were able to consistently measure these low threading dislocation densities. A direct comparison of two x=0.35 films, one graded in Ge content and one uniform in Ge content, shows that compositional grading decreases the dislocation density by a factor of 100–1000. These. higher quality graded buffers have been used as templates for the subsequent growth of InGaP light emitting diodes (LED) and GexSi1−x/Si two-dimensional electron gas (2DEG) structures. Room temperature operation of orange-red LEDs were obtained at current densities of =600A/cm, and mobilities as high as 96,000 cm2/V-s were achieved at 4.2K in the 2DEG structures.