Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive semiconductors for use in electronic, optoelectronic, and spintronic devices. This study examines how the electronic properties of 2D TMDs can be tuned for specific applications through a combination of alloying and applying strain. Group VIB TMDs (MoS2, MoSe2, WS2, and WSe2) are alloyed by mixing in the metal or chalcogen sublattices. Density functional theory is used to model the structures of the alloys at varying compositions and examine the electronic structure of the alloys under biaxial tensile and compressive strain. Alloying results in the continuous monotonic tuning of the direct bandgap between the limits of the pure components, with low bowing coefficients for all alloys. Applying strain results in a transition of the bandgap from direct to indirect at low values of tensile strain and higher values of compressive strain. Strain can also be used to increase or decrease the bandgap with low compressive strain or tensile strain, respectively. The shift rate, or the rate at which the bandgap changes with applied strain, changes monotonically with alloy composition. MoS2 is identified as the 2D TMD with the highest shift rate.