Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?

Abstract

For the first time, the tradeoffs between drive current (Ion ), intrinsic delay (tau), band-to-band tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in futuristic high mobility channel materials, like strained-Si (0-100%), strained-SiGe (0-100%) and relaxed-Ge. The optimal channel materials and device structures for nanoscale p-MOSFETs are discussed through detailed BTBT (including band structure and quantum effects), full-band Monte-Carlo, 1-D Poisson-Schrodinger simulations and experiments on ultra-thin (<10nm) SOI FETs