Abstract
We have investigated the role of [ZnSe-ZnSxSe1-x]×n strained-layer superlattice (SLS) buffers for obtaining a high-quality ZnSe epilayer on a GaAs substrate from the dependence of PL properties in the epilayers on SLS buffer structures. The SLS buffers have been demonstrated to suppress the propagation of structural defects such as dislocations from the underlying layer to the upper layer. However, when the strain energy accumulated in the SLS's is too high, the defects are newly generated in the upper layer. It is tentatively suggested that optimized SLS buffers are very useful for realizing higher-quality ZnSe epulayers.
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