Abstract
An improved device structure employing strained channel with thin insulating layer between alternately stacked pillars is presented in this paper. The biaxial strain is introduced in the channel by the growth of SiGe layer over silicon substrate. SiO2 layer is incorporated to minimize the interdiffusion between the alternate pillars. Simulation results show incurring improvements with 18% reduction in the area specific on-resistance apart from approximately 6% increment in the breakdown voltage of the proposed device. The effect of germanium (Ge) composition variation on the device performance is also rigorously analyzed and it is observed that mobility, electron concentration and strain generated in the channel increases as the Ge composition increases.
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