Abstract
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance.
Highlights
Scaling of complementary metal oxide semiconductor (CMOS) technology has brought about significant improvements in terms of power dissipation, device density, switching frequency, and costs reductions
The main constraint of metal-oxide-semiconductor field-effect transistor (MOSFET) for addressing these issues is the inverse subthreshold swing SS (=dVg /dlog( Id )), which is limited to 60 mV/dec at room temperature
tunnel field effect transistor (TFET) relies on quantum band-to-band tunneling (BTBT) to inject carriers from the source to the channel while cutting off the high-energy tail of the Fermi distribution, essentially having a similar effect to cooling down the distribution
Summary
Scaling of complementary metal oxide semiconductor (CMOS) technology has brought about significant improvements in terms of power dissipation, device density, switching frequency, and costs reductions. Continued reduction of device dimensions into the nanometers range faces major issues with the high leakage current, unscalability of supply voltage Vdd , and lowered Ion /Ioff switching ratio. Like high-k oxide and thin strained silicon, and highly scaled device structures, like nanowires (NWs), silicon TFETs have achieved promising results for both n- and p-type devices [8]. Sci. 2017, 7, x FOR PEER REVIEW the array This stems from fact that the tunneling probability the sourceshape of TFETs exponential has exponential dependence on the process-related parameters, such asatnanowire andhas doping process-related parameters, nanowire shape are andmore doping profile. SS.conclusions at each step to further improve the Ion -current and average SS
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