Abstract
The material and devices in heterostructures of strained Si on relaxed Si-Ge layer have recently drawn much interest. Band structure, mobility and impurity scattering of strained silicon layers have been discussed. Single crystal growth of Si-Ge layer by Ge ion implantation is presented. Various structures of strained silicon-SiGe devices are described. The process feasibility analysis and numerical simulation of Ge implanted SiGe shannel PMOSFET is discussed. The effect of germanium profile on the performance of HBT and MOS is discussed.
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