Strained silicon on SiGe: Temperature dependence of carrier effective masses

Abstract

A strain Bir–Pikus Hamiltonian Hst, based on a 20 band sps* k⋅p Hamiltonian Hkp, is used to describe the valence band and the first two conduction bands over the entire Brillouin zone. This full-band k⋅p computation of the carrier dispersion relation is used to calculate electron and hole effective masses in strained silicon. Hole density of states masses are found to be very temperature dependent whereas electron effective masses can be considered temperature independent to first order.