Abstract
A strain Bir–Pikus Hamiltonian Hst, based on a 20 band sps* k⋅p Hamiltonian Hkp, is used to describe the valence band and the first two conduction bands over the entire Brillouin zone. This full-band k⋅p computation of the carrier dispersion relation is used to calculate electron and hole effective masses in strained silicon. Hole density of states masses are found to be very temperature dependent whereas electron effective masses can be considered temperature independent to first order.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
