Strained-Silicon Heterojunction Bipolar Transistor

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Experimental and modeling results are reported for high-performance strained-silicon heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a compressively strained <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{0.7}\hbox{Ge}_{0.3}$</tex></formula> base on top of a relaxed <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{0.85}\hbox{Ge}_{0.15}$</tex></formula> collector. By using a <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{0.85}\hbox{Ge}_{0.15}$</tex></formula> virtual substrate strain platform, it is possible to utilize a greater difference in energy band gaps between the base and the emitter without strain relaxation of the base layer. This leads to much higher gain, which can be traded off against lower base resistance. There is an improvement in the current gain <formula formulatype="inline"><tex Notation="TeX">$\beta$</tex> </formula> of 27<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula> over a conventional silicon bipolar transistor and 11<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula> over a conventional SiGe HBT, which were processed as reference devices. The gain improvement is largely attributed to the difference in energy band gap between the emitter and the base, but the conduction band offset between the base and the collector is also important for the collector current level. </para>