Strained Si–O–Si bonds in amorphous SiO2 materials: A family member of active centers in radio, photo, and chemical responses

Abstract

Amorphous SiO2 (a-SiO2), such as bulk silica glasses and thin films has been one of the key materials in modern optoelectronic industries. These materials are currently used in communication technologies as optical fibers, thin films for electrical insulation in dynamic random access memories (DRAM), and optical lenses for excimer laser lithography, for example. The property essential for these applications is the wide band gap amounting to ∼9 eV. However, bulk silica glasses commercially available and silica thin films show photoresponses to subband gap lights in the vicinity of 5 eV and unexpected trapping of charges, and the behavior has a strong dependency on the preparation history. A number of studies were carried out to clarify the relationship between the properties and structural imperfections in the materials and the formation mechanisms of the defects. There are two categories of the imperfections: one is dopant- or impurity-related imperfections and the other is nonstoichiometry related defects. These defects constitute gap states in a-SiO2. The structural identification was usually performed by absorption and emission spectroscopy in the visible–ultraviolet (UV) region and electron spin resonance (ESR). The experimentally proposed models were compared with the predictions by theoretical calculations of energy levels. Recent development of the excimer laser lithography technique led us to recognize that a latent member, which has been unnoticed because of no response to the optical absorption or emission in the visible-UV range and ESR absorption, exists in the family of active centers in a-SiO2, that is a strained Si–O–Si bond originating from the planar three membered ring. In contrast, the puckered four membered ring is unstrained. Although it has been pointed out that there was a wide distribution in Si–O–Si bond angle from 90° to 180° by x-ray analysis or Si29 solid state nuclear magnetic resonance, the physical, and chemical responses of the Si–O–Si bonds with a particular bond angle could not be differentiated. Very recently it was clarified that a strained Si–O–Si bond, in other words chemically excited bonds, has an optical absorption locating on the band edge. The chemically excited bond can be scavenged by fluorine doping, because it is chemically reactive. In the present review we show that the unresolved optical and electric responses of silica glasses can be comprehensively understood by taking the presence of the strained bonds into consideration.