Abstract
ABSTRACTLattice mismatch associated with heteroepitaxy imposes a significant limitation on the epitaxial compatibility between overlayer and substrate. In lattice mismatched systems the misfit may be accommodated to some extent by strain. However, in order to maintain misfit strain and avoid dislocation generation the epitaxial layer must not exceed a critical thickness. Some success has been reported in avoiding damaged epitaxial layers with thicknesses greater than the critical thickness by overgrowing on patterned or rough surfaces. For the case of Si, surface roughening by energetic Ar+ bombardment as a pre-growth roughening treatment is discussed and assessed. Evolution of surface features as a function of initial substrate treatment, ion accelerating potential, and the duration of bombardment are presented. Stability of the surface features generated by bombardment for typical overgrowth conditions was tested to assess feasibility of this technique for Si heteroepitaxy.
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