Strained InGaAs/InP quantum-well laser diodes for low-threshold operation

Abstract

Strained-layer epitaxy has emerged as an important tool in the fabrication of quantum-well (QW) laser diodes operating in new wavelength ranges while at the same time providing theoretical benefits due to strain-induced warping of the band structure.1,2 In InGaAs/GaAs strained quantum-well devices, these benefits have been documented in the form of lower threshold current densities and higher differential gain.3 Fewer investigations of this sort have been made on long wavelength InGaAs/lnP devices, however, where the interest in the use of strained quantum wells lies primarily in the anticipated reduction of Auger currents. Low threshold current InP-based devices will then allow easier use in optoelectronic integrated circuits, for example, since their compatibility with existing long-wavelength communications technology hold advantages over GaAs-based devices.