Strained InAs/Ga 0.47In 0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications

Abstract

Strained InAs single quantum wells (SQWs) embedded in a Ga 0.47In 0.53As matrix are studied by photoluminescence spectroscopy. Spontaneous emission is obtained up to 2.4 μm at 300 K, which is the longest wavelength achieved so far with QWs grown on InP substrates. Laser diodes based on a 10 ML wide InAs SQW confined by Ga 0.47In 0.53As layers are characterized. At 80 K the emission spectrum of broad area diodes is centered at 1.836 μm and the threshold current density is 475 A/cm 2. Continuous wave operation is achieved with narrow stripe devices but at shorter wavelength due to increased losses and filling of the QW energy levels.