Abstract
We have demonstrated epitaxial-based biaxially strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). Tensile strained In0.53Ga0.47As MOSFETs shows a high peak mobility of 2150 cm2/Vs with the enhancement factor of 3.7 against Si MOSFETs. Furthermore, we have investigated the mobility enhancement mechanisms in the tensile strained In0.53Ga0.47As MOSFETs. It has been found that biaxial tensile strain is effective to enhance the electron mobility in InGaAs MOSFETs by an increase of inversion carrier density, which is caused by the modulation of conduction band minimum.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
