Abstract
Nanometer-scale scanning moiré fringes (SMFs) of the hetero interfaces in Si/Si1−xGex/Si1−xGex/Si1−xGex multi-layers have been obtained by high-angle annular dark field scanning transmission electron microscope. The SMFs that appeared at each interface were commensurate, when the layers had no defects from epitaxial growth. The SMF images showed that the Si substrate at the interface was tensilely strained, and it was measured to be 0.2% relative to the unstrained Si substrate. In addition, it was found that the (220) lattice plane of the Si1−xGex layers was linearly increased with a gradient of 0.015%/nm in grown direction of [001].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
