Abstract
The strain effect on the magnetotransport properties in La0.9Sr0.1MnO3 films epitaxially deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates, is demonstrated. Large compressive strain is formed in the films on the LAO substrate; however, that on the STO is subject to a small tensile strain. Strain relaxation of films grown on both substrates results in the formation of a spin-canted antiferromagnetic (AFM) insulative phase, causing the increase in resistivity with decreasing temperature. The characteristics of the AFM insulative phase become apparent with increasing film thickness, which leads to a clear AFM transition in the films grown on LAO and a reduction of magnetization and Curie temperature in those on STO. The magnetoresistance effect of the films is also consistent with the above results.
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