Abstract
Applying strain to a Weyl semimetal (WSM) breaks its lattice symmetry and results in a valley-dependent strain gauge potential. Here, we investigate the application of the strain potential to modulate the valley and charge transport of a WSM-based $n$-$p$-$n$ junction system. The strain potential, in combination with insulating barriers, enables modulation of the current and the realization of valley-asymmetric transmission with a high on:off ratio. By considering the geometric optics of electron waves and the transverse displacement of Fermi surfaces due to the strain gauge, we derive the critical strains for switching the current, as well as for the onset of complete angular separation of the two valley currents. The analytical results are verified by numerical calculations of the tunneling transmission and conductance. We also derive the expression for the subthreshold swing of the device, which can achieve values below the thermionic limit by tuning the strain and barrier height.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
