Abstract
Grazing incidence x-ray diffraction experiments employing the asymmetric (202) Bragg diffraction have been performed to characterize self-assembled InAs quantum dots grown by molecular-beam epitaxy. We find that the strain is elastically relaxed with different components. The volume distribution of partially strained InAs inside islands is peaked at intermediate strain values. The fraction of both almost fully strained and totally relaxed InAs is found to be small. In addition, a small volume fraction of relaxed InxGa1−xAs is found.
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