Abstract
We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an atomic force microscope tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed up to a value of 37. This facilitates local static strain variation measurements down to ∼10−7. This type of strain sensor could have applications in nanoelectromechanical systems used in displacement, force, and mass sensing, for example.
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