Abstract
Silicon Germanium (SiGe) strain relaxed buffers (SRB) are fully relaxed epitaxial layers that serve as templates for subsequent growth of tensile or compressively strained layers that can serve as N and P channels for continued scaling of Si CMOS technology. In the work reported here, we have studied thick graded SRB layers from a holistic perspective which includes SRB growth targeting defect density optimization followed by the growth of strained Si/SiGe layers on these virtual substrates.
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