Abstract
The strain relaxation mechanism of a 500-nm-thick Si0.33Ge0.67 layer grown on Si(001) at 250 °C by molecular beam epitaxy has been investigated. During growth, the strain relaxation occurs without misfit dislocations. Moreover, a strained region coexists with a relaxed one in a single Si0.33Ge0.67 layer. In the relaxed region of Si0.33Ge0.67 layer, stacking faults, instead of misfit dislocations, are the major relief source of strain energy. These anomalous behaviors which are different from conventional relaxation mechanism have been interpreted by the characteristics of the stacking fault.
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