Abstract
AbstractWe report on the thickness dependence of strain relaxation in InxGa1‐xN/GaN for single and multiple quantum‐well structures. For InGaN wells thicker than a certain value gradual relaxation occurs and can be presented by two relaxation mechanisms. The first is related to the relaxation of the InGaN well, and the second to the relaxation of the whole multiple quantum well structure. We have also found that the onset of relaxation of multiple quantum wells depends on the number of quantum wells (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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