Abstract
Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.
Highlights
Strain relaxation processes in InAs heteroepitaxy have been studied
The layer-by-layer growth of the (111)A-oriented InAs film is accompanied by the formation of a misfit dislocation network at the InAs/GaAs interface[6], so that the generation of defects in the film is strongly suppressed
This paper reports the strain relaxation processes and structural properties of InAs films heteroepitaxially grown on the lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A
Summary
While InAs grows in a layer-bylayer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The novel growth technique has been successfully applied to the layer-by-layer growth of InAs on Si(111)[9], GaSb growth on InAs/Si(111)[10], and to the improvement of the crystalline quality of InGaAs11 and GaSb12 on InAs/GaAs(111)A This technique has a great advantage, especially for the growth on Si(111), because the formation of antiphase domain boundaries in InAs films is suppressed, in contrast with the growth on the (001)-oriented substrate. This paper reports the strain relaxation processes and structural properties of InAs films heteroepitaxially grown on the lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A. The peak width of x-ray rocking curve is insensitive to the density of threading defects
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