Abstract
Strain relaxation in Si1-xGex epitaxial layers is investigated after the reaction of Co and Pt with strained SiGe alloy. The epitiaxial SiGe alloy studied has a Ge fraction ranging between x = 5% to 22%. The strain in the Si1-xGex is evaluated using multi-crystal high resolution x-ray diffraction mapping in reciprocal space (MC-HRXRD). The results show that for Co in order to keep the strain in Si1-xGex unaffected, a sacrificial Si layer is needed. The direct reaction of 40 nm Co on Si0.9Ge0.1 can lead to defect formation and 40% strain relaxation. This is in contrast to Pt/Si1-xGex reaction, where negligible relaxation was observed.
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