Abstract
In this paper we report on the defects formed in Ge crystals grown on Si(001) pillars upon strain relaxation. The analysis is performed by high-angle annular dark-field scanning transmission electron microscopy. The strain relaxation happens by means of 60° and 90° misfit dislocations with Burgers vectors b→=12⟨110⟩. Misfit dislocations may split forming partial dislocations with Burgers vectors b→=16⟨112⟩, and are separated by a stacking fault. Besides, intrinsic stacking faults in different {111} planes interact and annihilate each other forming stair rod dislocations. Coherent and incoherent twin boundaries of the Σ3{111} and Σ3{112} types are also found in the Ge.
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