Abstract
AlN layers were grown by molecular beam epitaxy on GaN single crystals (grown at high-hydrostatic pressure). The layers were examined in situ using RHEED, high-resolution X-ray reflectivity and X-ray diffraction at grazing incidence conditions. It was found that layers grown on single-crystal GaN had very smooth surfaces (3–5 Å RMS roughness). A 100 Å thick AlN layer was almost strained, while a 1500 Å thick one was partially relaxed. The obtained results, which differ from previously published for AlN epitaxy on GaN on sapphire, are the first concerning lattice relaxation of AlN grown on GaN single crystals. The measurements performed for the strained AlN layer enabled us to determine the Poisson ratio for this compound ν=0.20±0.02.
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