Strain on ferroelectric thin films

Abstract

Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead zirconate–lead titanate, Pb(Zr1−xTix)O3, monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence of both iso- and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified on Pb(Zr1−xTix)O3.