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Abstract
The k⋅p perturbation theory is adopted to calculate the strain-modulated excitonic transition energies and their polarization properties in c- and m-plane AlN. The two topmost valence subbands exchange their band characteristics at the degenerate point where εzz=0.98% and εxx=εyy=−1.70%. The surface emission efficiency of c-plane AlN films can be dramatically enhanced with εzz>0.98% (εxx=εyy<−1.70%), where the lowest excitonic transition is predominantly z-polarized. Besides, nonpolar plane (m- or a-plane) AlN experiencing anisotropic in-plane strain can be chosen as a candidate for enhancing the surface emission efficiency by proper strain manipulation.
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