Abstract
The growth dynamics of self-assembled GaSb quantum dots (QDs) on GaAs substrate was investigated using kinetic Monte Carlo method. The strain induced by the lattice mismatch between the epitaxial material and the substrate was shown to be directly responsible for the three-dimensional QD formation. Different geometries of the initial seeds on the surface which are equally favorable from an energy point of view can result in different GaSb nanostructures (nanostrips and nanoring).
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