Strain-induced red-green-blue wavelength tuning in InGaN quantum wells

Abstract

Monolithically integrating multi-color pixels from a standard InGaN quantum well active region was demonstrated with a wavelength tuning range of 178 nm. Nanopillar structures were fabricated to enable the wavelength tuning. Strain induced wavelength shift was investigated both experimentally and theoretically. A simple one-dimensional strain relaxation model was shown to accurately predict the wavelength shift as a function of the nanopillar diameter. The strain relaxation was found to depend on the indium composition in the quantum well. No noticeable increase of the defect density was observed after the strain relaxation process.