Abstract
We study direct and indirect pseudomagnetoexcitons, formed by an electron and a hole in the layers of gapped graphene under strain-induced gauge pseudomagnetic field. Since the strain-induced pseudomagnetic field acts on electrons and holes the same way, it occurs that the properties of single pseudomagnetoexcitons, their collective effects and phase diagram are cardinally different from those of magnetoexcitons in a real magnetic field. We have derived wave functions and energy spectrum of direct in a monolayer and indirect pseudomagnetoexcitons in a double layer of gapped graphene. The quantum Hall effect for direct and indirect excitons was predicted in the monolayers and double layers of gapped graphene under strain-induced gauge pseudomagnetic field, correspondingly.
Highlights
In this study we focus on the influence of strain on the properties of excitons and their collective properties in mono and double layers of gapped graphene
The gap and the strain field have a different origin in graphene: The gap appears when we break the sublattice symmetry, whereas the strain is caused by smooth deformations of the graphene sheet
Let us mention that for the non-interacting electron-hole pair in a high strain-induced pseudomagnetic fields (PMF) we obtain that the energy spectrum of both the motion of the center-of-mass and the relative motion are quantized
Summary
In this study we focus on the influence of strain on the properties of excitons and their collective properties in mono and double layers of gapped graphene. Starting from the effective Dirac Hamiltonian for a single valley of gapped graphene in the presence of a strain field with components Ax and Ay3, we consider the Dirac equation for a pair of an electron at position re and a hole at position rh attracting via V (|re − rh|) potential.
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