Abstract
By means of surface reflection Raman scattering we have observed the line broadening of the q ≅ 0 TO and LO phonons in GaAs due to mechanical strain near the polished surfaces. The asymmetry observed in the strain broadened TO phonon line shape is attributed to the presence of high two acoustic phonon density of states just above the TO phonon frequency.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
