Strain induced modification of quasi-two-dimensional electron gas state on √3×√3-Ag structure

Abstract

To establish fundamental understanding of the influence of lattice strain to a quasi-two-dimensional electron gas state (2DEG), the both effects of compressive and tensile strains induced in the √3×√3-Ag structure formed on the Ge/Si(111) and the Si/Ge(111) surfaces were investigated with scanning tunneling microscopy and angle resolved ultraviolet photoelectron spectroscopy. The effective mass of the 2DEG is decreased by the compressive strain and that is increased by the tensile strain. The results indicate the dispersion of the electronic state will be modified by controlling the lattice strain.