Strain induced modification in electronic properties of monolayer InSb

Abstract

The electronic properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. The band structures of InSb with and without spin-orbit coupling (SOC) consideration are compared and the SOC modification on the electronic properties are investigated. In this regard, the electron and hole effective masses decrease by applying SOC two and ten times, respectively. The location of the valleys in the conduction and valence bands for various strains are explored, and their corresponding effective masses are reported. The lowest effective mass is obtained for both electron and hole at tensile strain. In addition, the bandgap demonstrates a maximum at small compressive strain and transits to metal at large tensile strain. The work function of this material for different strains is obtained. Finally, a numeric fitting is applied to all results and their corresponding equations are reported.