Strain-induced formation of ultra-coherent CDW in quasi one-dimensional conductors

Abstract

We have developed techniques for stretching whiskers up to 1.5–3%, including those of nanometer cross-section. An exceptionally high coherence of the CDW transport for TaS3 and NbS3 has been observed under the uniaxial strain, ε. For TaS3 samples with transverse dimensions ∼0.1–1μm for ε approaching εс the CDW coherence falls down and a new, ultra-coherent, CDW phase begins to form. At ε~εс the two phases coexist within a very narrow range δε~2×10−4. Further stretching results in a complete vanishing of the transport of the incoherent CDW. The threshold fields, Et, of the ultra-coherent CDW, as well as the dissipation, appear by an order of magnitude lower; giant negative differential resistance is observed. The narrow-band noise shows up to 10 harmonics of the fundamental frequency. RF irradiation results in complete synchronization of the CDW sliding. The CDW transformation shows features of the 1st order transition. We also report hysteresis of resistance vs. ε, from which we conclude that the transition cannot be associated with the lock-in of the CDW: the strain draws the CDW away from 4-fold commensurability with the lattice.