Abstract
ABSTRACTWe present a multi-band effective mass kP study of built-in strain induced effects on the resonant tunnelling of holes in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Double Barrier Resonant Tunnelling Heterostructures with 0 ≤ × ≤ 0.15 and 0.2 ≤ y ≤ 0.3. We show the influence of the SH split-off band on the resonant tunnelling of light (LH) and heavy (HH) holes through the strain-induced mixing of valence subband states. This valence subbands coupling is shown to result in a broadening of the resonance peaks in SL, LS hole transmission curves and a smearing out of the corresponding resonance peaks in the tunnel current. This effect is shown to decrease with increasing biaxial compression (decreasing x) and is minimum at x=0 in an Al.20Ga.80N/GaN/Al.20Ga.80N heterostructure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
